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      Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm

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      Author
      Akca, B. Imran
      Dana, Aykutlu
      Aydınlı, Atilla
      Rossetti, M.
      Li L.
      Fiore, A.
      Dagli, N.
      Date
      2007
      Source Title
      2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference
      Print ISSN
      2162-2701
      Publisher
      IEEE
      Language
      English
      Type
      Conference Paper
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      Abstract
      In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss characterization were carried out by using a 1.3 μm light from a thermally tunable laser. Transmission through the device was recorded as a function of wavelength. Loss coefficient is found to be wavelength and bias voltage dependent
      Permalink
      http://hdl.handle.net/11693/27123
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/CLEOE-IQEC.2007.4386080
      Collections
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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