Modulation in InAs quantum dot waveguides
Author
Akca, B. Imran
Dana, Aykutlu
Aydınlı, Atilla
Rossetti, M.
Li L.
Fiore, A.
Dagli, N.
Date
2007Source Title
Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light
Print ISSN
2162-2701
Publisher
Optical Society of America
Language
English
Type
Conference PaperItem Usage Stats
139
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Abstract
Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.
Keywords
Indium arsenideMolecular beam epitaxy
Nanophotonics
Photonics
Semiconductor quantum dots
Waveguides
Electro optic coefficient
GaAs
InAs quantum dots
Self-assembled
Modulation