Modulation in InAs quantum dot waveguides

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Author(s)
Date
2007
Source Title
Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light
Print ISSN
2162-2701
Publisher
Optical Society of America
Language
English
Type
Conference Paper
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Abstract
Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.
Keywords
Indium arsenide
Molecular beam epitaxy
Nanophotonics
Photonics
Semiconductor quantum dots
Waveguides
Electro optic coefficient
GaAs
InAs quantum dots
Self-assembled
Modulation
Permalink
http://hdl.handle.net/11693/27122
Published Version (Please cite this version)
https://doi.org/10.1364/IPNRA.2007.IWE4
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