Modulation in InAs quantum dot waveguides

Files

Modulation in InAs quantum dot waveguides.pdf (194.61 KB)

Date

2007

Authors

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

BUIR Usage Stats
0
views
19
downloads

Citation Stats

  • Share

Series

Abstract

Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.

Source Title

Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light

Publisher

Optical Society of America

Course

Other identifiers

Book Title

Keywords

Indium arsenide, Molecular beam epitaxy, Nanophotonics, Photonics, Semiconductor quantum dots, Waveguides, Electro optic coefficient, GaAs, InAs quantum dots, Self-assembled, Modulation

Degree Discipline

Degree Level

Degree Name

Citation

Permalink

http://hdl.handle.net/11693/27122

Published Version (Please cite this version)

https://doi.org/10.1364/IPNRA.2007.IWE4

Collections

Scholarly Publications - Physics
Scholarly Publications - UNAM

Language

English

Type

Conference Paper