Modulation in InAs quantum dot waveguides

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Author
Imran Akca, B.
Dana, A.
Aydinli, A.
Rossetti, M.
Li L.
Fiore, A.
Dagli, N.
Date
2007
Source Title
Optics InfoBase Conference Papers
Print ISSN
21622701
Publisher
Optical Society of America
Language
English
Type
Conference Paper
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Abstract
Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.
Keywords
Indium arsenide
Molecular beam epitaxy
Nanophotonics
Photonics
Semiconductor quantum dots
Waveguides
Electro optic coefficient
GaAs
InAs quantum dots
Self-assembled
Modulation
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http://hdl.handle.net/11693/27122
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