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dc.contributor.authorAkca, B. Imranen_US
dc.contributor.authorDana, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorRossetti, M.en_US
dc.contributor.authorLi L.en_US
dc.contributor.authorDagli, N.en_US
dc.contributor.authorFiore, A.en_US
dc.coverage.spatialBaltimore, MD, USA, USAen_US
dc.date.accessioned2016-02-08T11:45:07Z
dc.date.available2016-02-08T11:45:07Z
dc.date.issued2007en_US
dc.identifier.issn2162-2701
dc.identifier.urihttp://hdl.handle.net/11693/27121
dc.descriptionDate of Conference: 6-11 May 2007en_US
dc.description.abstractThe electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.en_US
dc.language.isoEnglishen_US
dc.source.title2007 Quantum Electronics and Laser Science Conferenceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/QELS.2007.4431212en_US
dc.subjectElectrooptical devicesen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectElectro optic coefficienten_US
dc.subjectGaAsen_US
dc.subjectInAs quantum dotsen_US
dc.subjectLaser structuresen_US
dc.subjectLinear electro-optic coefficientsen_US
dc.subjectReverse biasen_US
dc.subjectIndium arsenideen_US
dc.titleLinear electro-optic coefficient in multilayer self-organized InAs quantum dot structuresen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.identifier.doi10.1109/QELS.2007.4431212en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorAydınlı, Atilla


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