Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

Thumbnail
Author
Akca, B. Imran
Dana, Aykutlu
Aydınlı, Atilla
Rossetti, M.
Li L.
Dagli, N.
Fiore, A.
Date
2007
Source Title
2007 Quantum Electronics and Laser Science Conference
Print ISSN
2162-2701
Publisher
IEEE
Language
English
Type
Conference Paper
Item Usage Stats
154
views
116
downloads
Abstract
The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.
Keywords
Electrooptical devices
Molecular beam epitaxy
Semiconductor quantum dots
Electro optic coefficient
GaAs
InAs quantum dots
Laser structures
Linear electro-optic coefficients
Reverse bias
Indium arsenide
Permalink
http://hdl.handle.net/11693/27121
Published Version (Please cite this version)
http://dx.doi.org/10.1109/QELS.2007.4431212
Collections
Show full item record