Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures
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Optical Society of America
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27121
The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.