Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

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Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures.pdf (282.05 KB)

Date

2007

Authors

Aydınlı, Atilla

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Abstract

The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.

Source Title

2007 Quantum Electronics and Laser Science Conference

Publisher

IEEE

Keywords

Electrooptical devices, Molecular beam epitaxy, Semiconductor quantum dots, Electro optic coefficient, GaAs, InAs quantum dots, Laser structures, Linear electro-optic coefficients, Reverse bias, Indium arsenide

Permalink

http://hdl.handle.net/11693/27121

Published Version (Please cite this version)

http://dx.doi.org/10.1109/QELS.2007.4431212

Collections

Scholarly Publications - Physics
Scholarly Publications - UNAM

Language

English

Type

Conference Paper