Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

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Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures.pdf (282.05 KB)
Date
2007
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Source Title
2007 Quantum Electronics and Laser Science Conference
Print ISSN
2162-2701
Electronic ISSN
Publisher
IEEE
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Language
English
Type
Conference Paper
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Abstract

The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.

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Keywords
Electrooptical devices , Molecular beam epitaxy , Semiconductor quantum dots , Electro optic coefficient , GaAs , InAs quantum dots , Laser structures , Linear electro-optic coefficients , Reverse bias , Indium arsenide
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http://hdl.handle.net/11693/27121
Published Version (Please cite this version)
http://dx.doi.org/10.1109/QELS.2007.4431212
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Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)