Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

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Author
Akca, B.I.
Dana, A.
Aydinli, A.
Rossetti, M.
Li L.
Dagli, N.
Fiore, A.
Date
2007
Source Title
Optics InfoBase Conference Papers
Print ISSN
21622701
Publisher
Optical Society of America
Language
English
Type
Conference Paper
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Abstract
The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.
Keywords
Electrooptical devices
Molecular beam epitaxy
Semiconductor quantum dots
Electro optic coefficient
GaAs
InAs quantum dots
Laser structures
Linear electro-optic coefficients
Reverse bias
Indium arsenide
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http://hdl.handle.net/11693/27121
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