Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures
Date
2007Source Title
2007 Quantum Electronics and Laser Science Conference
Print ISSN
2162-2701
Publisher
IEEE
Language
English
Type
Conference PaperItem Usage Stats
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Abstract
The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.
Keywords
Electrooptical devicesMolecular beam epitaxy
Semiconductor quantum dots
Electro optic coefficient
GaAs
InAs quantum dots
Laser structures
Linear electro-optic coefficients
Reverse bias
Indium arsenide