| dc.contributor.author | Lişesivdin, S. B. | en_US |
| dc.contributor.author | Yıldız, A. | en_US |
| dc.contributor.author | Kasap, M. | en_US |
| dc.contributor.author | Özbay, Ekmel | en_US |
| dc.coverage.spatial | İstanbul, Turkey | en_US |
| dc.date.accessioned | 2016-02-08T11:44:17Z | en_US |
| dc.date.available | 2016-02-08T11:44:17Z | en_US |
| dc.date.issued | 2007 | en_US |
| dc.identifier.issn | 0094-243X | en_US |
| dc.identifier.uri | http://hdl.handle.net/11693/27100 | en_US |
| dc.description | Date of Conference: 22-26 August 2006 | en_US |
| dc.description | Conference Name: 6th International Conference of the Balkan Physical Union, 2006 | en_US |
| dc.description.abstract | The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, all conduction in undoped Al0.25Ga0.75N/GaN HEMT structures belong to the two dimensional electron gas (2DEG). With the acception of Hall sheet carrier density is the total polarization induced charge density, strains of 2DEG interfaces were calculated. Calculated strain values are in good agreement with the literature. Effects of the growth parameters of the nucleation layers of samples on the mobility and density of the 2DEG are listed. | en_US |
| dc.language.iso | English | en_US |
| dc.source.title | AIP Conference Proceedings | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.2733364 | en_US |
| dc.subject | 2DEG | en_US |
| dc.subject | AlGaN/GaN | en_US |
| dc.subject | HEMT | en_US |
| dc.subject | QMSA | en_US |
| dc.subject | Strain | en_US |
| dc.title | Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures | en_US |
| dc.type | Conference Paper | en_US |
| dc.department | Department of Physics | en_US |
| dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
| dc.department | Department of Electrical and Electronics Engineering | en_US |
| dc.citation.spage | 623 | en_US |
| dc.citation.volumeNumber | 899 | en_US |
| dc.identifier.doi | 10.1063/1.2733364 | en_US |
| dc.publisher | American Institute of Physics | en_US |
