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dc.contributor.authorLişesivdin, S. B.en_US
dc.contributor.authorYıldız, A.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialİstanbul, Turkeyen_US
dc.date.accessioned2016-02-08T11:44:17Zen_US
dc.date.available2016-02-08T11:44:17Zen_US
dc.date.issued2007en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27100en_US
dc.descriptionDate of Conference: 22-26 August 2006en_US
dc.descriptionConference Name: 6th International Conference of the Balkan Physical Union, 2006en_US
dc.description.abstractThe transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, all conduction in undoped Al0.25Ga0.75N/GaN HEMT structures belong to the two dimensional electron gas (2DEG). With the acception of Hall sheet carrier density is the total polarization induced charge density, strains of 2DEG interfaces were calculated. Calculated strain values are in good agreement with the literature. Effects of the growth parameters of the nucleation layers of samples on the mobility and density of the 2DEG are listed.en_US
dc.language.isoEnglishen_US
dc.source.titleAIP Conference Proceedingsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2733364en_US
dc.subject2DEGen_US
dc.subjectAlGaN/GaNen_US
dc.subjectHEMTen_US
dc.subjectQMSAen_US
dc.subjectStrainen_US
dc.titleStrain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structuresen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage623en_US
dc.citation.volumeNumber899en_US
dc.identifier.doi10.1063/1.2733364en_US
dc.publisherAmerican Institute of Physicsen_US


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