Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures
AIP Conference Proceedings
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27100
The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, all conduction in undoped Al0.25Ga0.75N/GaN HEMT structures belong to the two dimensional electron gas (2DEG). With the acception of Hall sheet carrier density is the total polarization induced charge density, strains of 2DEG interfaces were calculated. Calculated strain values are in good agreement with the literature. Effects of the growth parameters of the nucleation layers of samples on the mobility and density of the 2DEG are listed. © 2007 American Institute of Physics.