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dc.contributor.authorAlgul, B. P.en_US
dc.contributor.authorAvci, I.en_US
dc.contributor.authorAkram, R.en_US
dc.contributor.authorBozbey, A.en_US
dc.contributor.authorTepe, M.en_US
dc.contributor.authorAbukay, D.en_US
dc.date.accessioned2016-02-08T11:44:15Zen_US
dc.date.available2016-02-08T11:44:15Zen_US
dc.date.issued2007en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27099
dc.description.abstractWe have reported the effect of YBa2Cu3O 7-δ (YBCO) thin film deposition rate on the 24 and 30 degree STO bicrystal Josephson junctions critical currents by fabricating series of junctions with different deposition rates. Dependence of YBCO thin film structures on the deposition rate was investigated. We have observed that the critical currents of junctions are strongly affected by the thin film deposition rate. © 2007 American Institute of Physics.en_US
dc.language.isoEnglishen_US
dc.source.titleAIP Conference Proceedingsen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.2733503en_US
dc.subjectDeposition rateen_US
dc.subjectJosephson junctionsen_US
dc.titleDependence of Josephson junction critical current on the deposition rate of YBa2Cu3O7-δ thin filmsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage762en_US
dc.citation.volumeNumber899en_US
dc.identifier.doi10.1063/1.2733503en_US
dc.publisherA I P Publishing LLCen_US


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