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dc.contributor.authorAkça, Imran B.en_US
dc.contributor.authorDana, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorRossetti, M.en_US
dc.contributor.authorLi, A.en_US
dc.contributor.authorFiore, A.en_US
dc.contributor.authorDagli, N.en_US
dc.coverage.spatialMunich, Germanyen_US
dc.date.accessioned2016-02-08T11:43:35Z
dc.date.available2016-02-08T11:43:35Z
dc.date.issued2007en_US
dc.identifier.urihttp://hdl.handle.net/11693/27073
dc.descriptionDate of Conference: 17-22 June 2007en_US
dc.description.abstractThe low voltage modulation in InAs quantum dot waveguides is observed in this paper. We have measured the electro-optic coefficient in multilayer quantum dot structures far away from resonance and obtained an enhancement compared to bulk GaAs. Electro-absorption measurement results suggest that these waveguides are good candidates for use in electro-absorption modulators such as Mach-Zehnder devices.en_US
dc.language.isoEnglishen_US
dc.source.title2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conferenceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/CLEOE-IQEC.2007.4386216en_US
dc.titleElectric field dependence of modulation in multilayer InAs quantum dot waveguidesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.identifier.doi10.1109/CLEOE-IQEC.2007.4386216en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorAydınlı, Atilla


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