Electric field dependence of modulation in multilayer InAs quantum dot waveguides
Date
2007
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2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference
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IEEE
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English
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Abstract
The low voltage modulation in InAs quantum dot waveguides is observed in this paper. We have measured the electro-optic coefficient in multilayer quantum dot structures far away from resonance and obtained an enhancement compared to bulk GaAs. Electro-absorption measurement results suggest that these waveguides are good candidates for use in electro-absorption modulators such as Mach-Zehnder devices.