Electric field dependence of modulation in multilayer InAs quantum dot waveguides
Conference on Lasers and Electro-Optics Europe - Technical Digest
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27073
The low voltage modulation in InAs quantum dot waveguides is observed in this paper. We have measured the electro-optic coefficient in multilayer quantum dot structures far away from resonance and obtained an enhancement compared to bulk GaAs. Electro-absorption measurement results suggest that these waveguides are good candidates for use in electro-absorption modulators such as Mach-Zehnder devices.