InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature

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InGaN GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature.pdf (453.87 KB)
Date
2007
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Source Title
Proceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006
Print ISSN
1092-8081
Electronic ISSN
Publisher
IEEE
Volume
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Pages
34 - 35
Language
English
Type
Conference Paper
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Abstract

In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.

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Keywords
Gallium nitride , Light emitting diodes , Electroluminescence , Epitaxial growth , Temperature dependence , Wavelength measurement , Photoluminescence , Stimulated emission
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http://hdl.handle.net/11693/26926
Published Version (Please cite this version)
http://dx.doi.org/10.1109/LEOS.2006.278805
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Department of Physics
Department of Electrical and Electronics Engineering
Nanotechnology Research Center (NANOTAM)