InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
Proceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006
34 - 35
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In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.
Light emitting diodes