InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature

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InGaN GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature.pdf (453.87 KB)

Date

2007

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Abstract

In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.

Source Title

Proceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006

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IEEE

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Keywords

Gallium nitride, Light emitting diodes, Electroluminescence, Epitaxial growth, Temperature dependence, Wavelength measurement, Photoluminescence, Stimulated emission

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http://hdl.handle.net/11693/26926

Published Version (Please cite this version)

http://dx.doi.org/10.1109/LEOS.2006.278805

Collections

Scholarly Publications - Physics
Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - NANOTAM

Language

English

Type

Conference Paper