InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature

Sarı, Emre; Nizamoğlu, Sedat; Özel, Tuncay; Demir, Hilmi Volkan; İnal, Ayşe; Ülker, Erkin; Özbay, Ekmel; Dikme, Y.; Heuken, M.

doi:10.1109/LEOS.2006.278805

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Author

Sarı, Emre

Nizamoğlu, Sedat

Özel, Tuncay

Demir, Hilmi Volkan

İnal, Ayşe

Ülker, Erkin

Özbay, Ekmel

Dikme, Y.

Heuken, M.

Date

2007

Source Title

Proceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006

Print ISSN

1092-8081

Publisher

IEEE

Pages

34 - 35

Language

English

Type

Conference Paper

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Abstract

In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.