InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature

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Author(s)
Date
2007
Source Title
Proceedings of the 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2006
Print ISSN
1092-8081
Publisher
IEEE
Pages
34 - 35
Language
English
Type
Conference Paper
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Abstract
In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures.
Keywords
Gallium nitride
Light emitting diodes
Electroluminescence
Epitaxial growth
Temperature dependence
Wavelength measurement
Photoluminescence
Stimulated emission
Permalink
http://hdl.handle.net/11693/26926
Published Version (Please cite this version)
http://dx.doi.org/10.1109/LEOS.2006.278805
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