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dc.contributor.authorWainstein, D.en_US
dc.contributor.authorKovalev, A.en_US
dc.contributor.authorTetelbaum, D.en_US
dc.contributor.authorMikhailov, A.en_US
dc.contributor.authorBulutay, Ceyhunen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.coverage.spatialStockholm, Swedenen_US
dc.date.accessioned2016-02-08T11:38:50Zen_US
dc.date.available2016-02-08T11:38:50Zen_US
dc.date.issued2008en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://hdl.handle.net/11693/26894en_US
dc.descriptionDate of Conference: 2-6 July 2007en_US
dc.descriptionConference Name: 17th International Vacuum Congress (IVC-17), 13th International Conference on Surface Science (ICSS-13) and the International Conference on Nanoscience and Technology 2007 (ICN+T 2007)en_US
dc.description.abstractThe semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the electromagnetic spectrum. Si nanocrystals in sapphire matrix were formed by Si+ ion implantation with doses from 5×1016 to 3×1017 cm -2 at an accelerating voltage 100 kV and post-implantation annealing at 500-1100 d̀C for 2 hours. Depth distribution of lattice defects, impurities and Si nanocrystals, the peculiarities of interband electronic transitions were investigated by XPS and HREELS. The molecular orbitals and local electronic structure of the Al2O3 matrix with Si nanocrystals was calculated using an atomistic pseudopotential technique. The electronic structure of Si nanocrystals as determined from HREELS measurements is in good agreement with the theoretically calculated electronic structure for Si nanocrystals.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Physics: Conference Seriesen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/1742-6596/100/7/072014en_US
dc.subjectAccelerating voltagesen_US
dc.subjectAtomic structureen_US
dc.subjectDepth distributionen_US
dc.subjectDielectric matrixesen_US
dc.subjectElectromagnetic spectraen_US
dc.subjectElectronic transitionen_US
dc.subjectInterbanden_US
dc.subjectLattice defectsen_US
dc.subjectLocal electronic structuresen_US
dc.subjectMatrixen_US
dc.subjectPostimplantation annealingen_US
dc.subjectPseudo-potential techniquesen_US
dc.subjectSemiconductor nanocompositeen_US
dc.subjectSi nanocrystalen_US
dc.subjectTheoretical investigationsen_US
dc.subjectChemical bondsen_US
dc.subjectCrystal atomic structureen_US
dc.subjectElectronic propertiesen_US
dc.subjectElectronic structureen_US
dc.subjectIon implantationen_US
dc.subjectMolecular orbitalsen_US
dc.subjectSapphireen_US
dc.subjectSemiconducting siliconen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectNanocrystalsen_US
dc.titleExperimental and theoretical investigations of electronic and atomic structure of Si-nanocrystals formed in sapphire by ion implantationen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage1en_US
dc.citation.epage4en_US
dc.citation.volumeNumber100en_US
dc.citation.issueNumber7en_US
dc.identifier.doi10.1088/1742-6596/100/7/072014en_US
dc.publisherIOPen_US


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