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dc.contributor.authorAkram, Rizwanen_US
dc.contributor.authorDede, Müniren_US
dc.contributor.authorOral, Ahmeten_US
dc.coverage.spatialMadrid, Spainen_US
dc.date.accessioned2016-02-08T11:37:36Zen_US
dc.date.available2016-02-08T11:37:36Zen_US
dc.date.issued2008en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://hdl.handle.net/11693/26850en_US
dc.descriptionDate of Conference: 4-8 May 2008en_US
dc.descriptionConference Name: 2008 International Magnetics Conference, INTERMAG 2008en_US
dc.description.abstractIn this paper, we present the fabrication and variable temperature (VT) operation of Hall sensors, based on GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) as an active layer, integrated with quartz tuning fork (QTF) in atomic force-guided (AFM) scanning Hall probe microscopy (SHPM). Physical strength and a wide bandgap of GaN/AlGaN heterostructure makes it a better choice to be used for SHPM at elevated temperatures, compared to other compound semiconductors (AlGaAs/GaAs and InSb), which are unstable due to their narrower bandgap and physical degradation at high temperatures. GaN/AlGaN micro Hall probes were produced using optical lithography and reactive ion etching. The active area, Hall coefficient, carrier concentration, and series resistance of the Hall sensors were ∼1 × 1 μm, 10 mΩ/G at 4.2 K, 6.3 × 10 12 cm -2 and 12 kΩ at room temperature and 7 mΩ/G, 8.9 × 10 12 cm -2 and 24 kΩ at 400 K, respectively. A novel method of AFM feedback using QTF has been adopted. This method provides an advantage over scanning tunneling-guided feedback, which limits the operation of SHPM the conductive samples and failure of feedback due to high leakage currents at high temperatures. Simultaneous scans of magnetic and topographic data at various pressures (from atmospheric pressure to high vacuum) from 4. to 425K will be presented for different samples to illustrate the capability of GaN/AlGaN Hall sensors in VT-SHPM.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Transactions on Magneticsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/TMAG.2008.2001622en_US
dc.subjectAtomic force microscopy (AFM)en_US
dc.subjectGaN/AlGaN heterostructureen_US
dc.subjectHall probeen_US
dc.subjectQuartz tuning fork (QTF)en_US
dc.subjectScanning Hall probe microscopy (SHPM)en_US
dc.subjectCompound semiconductorsen_US
dc.subjectElevated temperatureen_US
dc.subjectLeakage currentsen_US
dc.titleVariable temperature-scanning Hall probe microscopy with GaN/AlGaN two-dimensional electron gas (2DEG) micro Hall sensors in 4.2-425 K range using novel quartz tuning fork AFM feedbacken_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage3255en_US
dc.citation.epage3260en_US
dc.citation.volumeNumber44en_US
dc.citation.issueNumber11en_US
dc.identifier.doi10.1109/TMAG.2008.2001622en_US
dc.publisherIEEEen_US


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