Electro-optic modulation of InAs quantum dot waveguides
ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/26818
The linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs.
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