Electro-optic modulation of InAs quantum dot waveguides
Proceedings of the 14th European Conference on Integrated Optics, ECIO 2008
Technische Universiteit Eindhoven
185 - 188
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The linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs.
Semiconductor quantum dots
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