Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models
Physica Status Solidi (C) Current Topics in Solid State Physics
1332 - 1336
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/26811
Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size). © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
- Work in Progress 1224