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      Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models

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      Author
      Basa, P.
      Petrik, P.
      Fried, M.
      Dâna, Aykutlu
      Aydınlı, Atilla
      Foss, S.
      Finstad, T. G.
      Date
      2008-05
      Source Title
      Physica Status Solidi (C) Current Topics in Solid State Physics
      Print ISSN
      1862-6351
      Publisher
      Wiley
      Volume
      5
      Issue
      5
      Pages
      1332 - 1336
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size).
      Keywords
      Annealing temperatures
      Dielectric functions
      Effective medium theories
      Ge nanocrystals
      High-temperature annealing
      Layer thickness
      Nanocrystal sizes
      Oscillator parameters
      Parametric models
      Plasma enhanced chemical vapour deposition
      Semiconductor model
      Si substrates
      Germanium
      Plasma deposition
      Silicon compounds
      Spectroscopic ellipsometry
      Nanocrystals
      Permalink
      http://hdl.handle.net/11693/26811
      Published Version (Please cite this version)
      https://doi.org/10.1002/pssc.200777773
      Collections
      • Advanced Research Laboratories (ARL) 34
      • Department of Electrical and Electronics Engineering 3597
      • Department of Physics 2329
      • Institute of Materials Science and Nanotechnology (UNAM) 1831
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