Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models
Author
Basa, P.
Petrik, P.
Fried, M.
Dâna, Aykutlu
Aydınlı, Atilla
Foss, S.
Finstad, T. G.
Date
2008-05Source Title
Physica Status Solidi (C) Current Topics in Solid State Physics
Print ISSN
1862-6351
Publisher
Wiley
Volume
5
Issue
5
Pages
1332 - 1336
Language
English
Type
ArticleItem Usage Stats
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Abstract
Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size).
Keywords
Annealing temperaturesDielectric functions
Effective medium theories
Ge nanocrystals
High-temperature annealing
Layer thickness
Nanocrystal sizes
Oscillator parameters
Parametric models
Plasma enhanced chemical vapour deposition
Semiconductor model
Si substrates
Germanium
Plasma deposition
Silicon compounds
Spectroscopic ellipsometry
Nanocrystals