AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain

Date
2008
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Source Title
Physica Status Solidi (C) Current Topics in Solid State Physics
Print ISSN
1862-6351
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Volume
5
Issue
6
Pages
2316 - 2319
Language
English
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Abstract

We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 femto-amperes for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

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Published Version (Please cite this version)