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dc.contributor.authorTut, T.en_US
dc.contributor.authorGokkavas, M.en_US
dc.contributor.authorOzbay, E.en_US
dc.date.accessioned2016-02-08T11:35:35Z
dc.date.available2016-02-08T11:35:35Z
dc.date.issued2008en_US
dc.identifier.issn18626351
dc.identifier.urihttp://hdl.handle.net/11693/26778
dc.description.abstractWe report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 femto-amperes for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica Status Solidi (C) Current Topics in Solid State Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssc.200778735en_US
dc.subjectAvalanche gainsen_US
dc.subjectCut-offen_US
dc.subjectDetectivityen_US
dc.subjectResponsivityen_US
dc.subjectReverse biasen_US
dc.subjectSolar-blind photodetectorsen_US
dc.subjectUltraviolet illuminationen_US
dc.subjectNitridesen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectSemiconductor diodesen_US
dc.subjectPhotodetectorsen_US
dc.titleAlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gainen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physics
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage2316en_US
dc.citation.epage2319en_US
dc.citation.volumeNumber5en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1002/pssc.200778735en_US


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