Germanium for high performance MOSFETs and optical interconnects
Author
Saraswat, K. C.
Kim, D.
Krishnamohan, T.
Kuzum, D.
Okyay, Ali Kemal
Pethe, A.
Yu H.-Y.
Date
2008-10Source Title
ECS Transactions
Print ISSN
1938-5862
Pages
3 - 12
Language
English
Type
Conference PaperItem Usage Stats
154
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127
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Abstract
It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently germanium has emerged as a viable candidate to augment Si for CMOS and optoelectronic applications. In this work we will first review recent results on growth of thin and thick films of Ge on Si, technology for appropriate cleaning of Ge, surface passivation using high-κ dielectrics, and metal induced crystallization of amorphous Ge and dopant activation. Next we will review application of Ge for high performance MOSFETs. Innovative Si/Ge MOS heterostructures will be described with high on current and low off currents. Finally we will describe optical detectors and modulators for on-chip and off-chip interconnect. Successful integration of Ge on Si should allow continued scaling of silicon CMOS to below 22 nm node. ©The Electrochemical Society.
Keywords
Device structuresDopant activations
Heterostructures
Information processing
Metal induced crystallizations
MOSFETs
New materials
Off chips
Off currents
On chips
On currents
Optical detectors
Opto-electronic applications
Si/ge
Silicon cmos
Surface passivations
Thin and thick films
Amorphous films
Amorphous silicon
Germanium
Metal cleaning
MOSFET devices
Optical interconnects
Passivation
Semiconducting germanium compounds
Silicon
Silicon alloys
Surface cleaning
Thick films
Semiconducting silicon compounds
Permalink
http://hdl.handle.net/11693/26763Published Version (Please cite this version)
http://dx.doi.org/10.1149/1.2986748Collections
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