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      • Department of Electrical and Electronics Engineering
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      Germanium for high performance MOSFETs and optical interconnects

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      Author
      Saraswat, K.C.
      Kim, D.
      Krishnamohan, T.
      Kuzum, D.
      Okyay, A., K.
      Pethe, A.
      Yu H.-Y.
      Date
      2008
      Source Title
      ECS Transactions
      Print ISSN
      19385862
      Volume
      16
      Issue
      10
      Pages
      3 - 12
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently germanium has emerged as a viable candidate to augment Si for CMOS and optoelectronic applications. In this work we will first review recent results on growth of thin and thick films of Ge on Si, technology for appropriate cleaning of Ge, surface passivation using high-κ dielectrics, and metal induced crystallization of amorphous Ge and dopant activation. Next we will review application of Ge for high performance MOSFETs. Innovative Si/Ge MOS heterostructures will be described with high on current and low off currents. Finally we will describe optical detectors and modulators for on-chip and off-chip interconnect. Successful integration of Ge on Si should allow continued scaling of silicon CMOS to below 22 nm node. ©The Electrochemical Society.
      Keywords
      Device structures
      Dopant activations
      Heterostructures
      Information processing
      Metal induced crystallizations
      MOSFETs
      New materials
      Off chips
      Off currents
      On chips
      On currents
      Optical detectors
      Opto-electronic applications
      Si/ge
      Silicon cmos
      Surface passivations
      Thin and thick films
      Amorphous films
      Amorphous silicon
      Germanium
      Metal cleaning
      MOSFET devices
      Optical interconnects
      Passivation
      Semiconducting germanium compounds
      Silicon
      Silicon alloys
      Surface cleaning
      Thick films
      Semiconducting silicon compounds
      Permalink
      http://hdl.handle.net/11693/26763
      Published Version (Please cite this version)
      http://dx.doi.org/10.1149/1.2986748
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      • Department of Electrical and Electronics Engineering 3337

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