• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Engineering
      • Department of Electrical and Electronics Engineering
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Engineering
      • Department of Electrical and Electronics Engineering
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Germanium for high performance MOSFETs and optical interconnects

      Thumbnail
      View / Download
      1.1 Mb
      Author
      Saraswat, K. C.
      Kim, D.
      Krishnamohan, T.
      Kuzum, D.
      Okyay, Ali Kemal
      Pethe, A.
      Yu H.-Y.
      Date
      2008-10
      Source Title
      ECS Transactions
      Print ISSN
      1938-5862
      Pages
      3 - 12
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
      154
      views
      127
      downloads
      Abstract
      It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently germanium has emerged as a viable candidate to augment Si for CMOS and optoelectronic applications. In this work we will first review recent results on growth of thin and thick films of Ge on Si, technology for appropriate cleaning of Ge, surface passivation using high-κ dielectrics, and metal induced crystallization of amorphous Ge and dopant activation. Next we will review application of Ge for high performance MOSFETs. Innovative Si/Ge MOS heterostructures will be described with high on current and low off currents. Finally we will describe optical detectors and modulators for on-chip and off-chip interconnect. Successful integration of Ge on Si should allow continued scaling of silicon CMOS to below 22 nm node. ©The Electrochemical Society.
      Keywords
      Device structures
      Dopant activations
      Heterostructures
      Information processing
      Metal induced crystallizations
      MOSFETs
      New materials
      Off chips
      Off currents
      On chips
      On currents
      Optical detectors
      Opto-electronic applications
      Si/ge
      Silicon cmos
      Surface passivations
      Thin and thick films
      Amorphous films
      Amorphous silicon
      Germanium
      Metal cleaning
      MOSFET devices
      Optical interconnects
      Passivation
      Semiconducting germanium compounds
      Silicon
      Silicon alloys
      Surface cleaning
      Thick films
      Semiconducting silicon compounds
      Permalink
      http://hdl.handle.net/11693/26763
      Published Version (Please cite this version)
      http://dx.doi.org/10.1149/1.2986748
      Collections
      • Department of Electrical and Electronics Engineering 3524
      Show full item record

      Related items

      Showing items related by title, author, creator and subject.

      • Thumbnail

        Practical multi-featured perfect absorber utilizing high conductivity silicon 

        Gok, A.; Yilmaz, M.; Bıyıklı, N.; Topallı, K.; Okyay, Ali Kemal (Institute of Physics Publishing, 2016)
        We designed all-silicon, multi-featured band-selective perfect absorbing surfaces based on CMOS compatible processes. The center wavelength of the band-selective absorber can be varied between 2 and 22 μm while a bandwidth ...
      • Thumbnail

        Conversion of wooden structures into porous SiC with shape memory synthesis 

        Dhiman, R.; Petrunin V.; Rana, K.; Morgen P. (2011)
        Synthesis of structured silicon carbide materials can be accomplished using wooden materials as the carbon source, with various silicon impregnation techniques. We have explored the low cost synthesis of SiC by impregnation ...
      • Thumbnail

        Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation 

        Dhiman, R.; Rana, K.; Bengu, E.; Morgen P. (2012)
        We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of ...

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      Copyright © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy