Germanium for high performance MOSFETs and optical interconnects
Okyay, A., K.
3 - 12
Item Usage Stats
MetadataShow full item record
It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently germanium has emerged as a viable candidate to augment Si for CMOS and optoelectronic applications. In this work we will first review recent results on growth of thin and thick films of Ge on Si, technology for appropriate cleaning of Ge, surface passivation using high-κ dielectrics, and metal induced crystallization of amorphous Ge and dopant activation. Next we will review application of Ge for high performance MOSFETs. Innovative Si/Ge MOS heterostructures will be described with high on current and low off currents. Finally we will describe optical detectors and modulators for on-chip and off-chip interconnect. Successful integration of Ge on Si should allow continued scaling of silicon CMOS to below 22 nm node. ©The Electrochemical Society.
Metal induced crystallizations
Thin and thick films
Semiconducting germanium compounds
Semiconducting silicon compounds
Published Version (Please cite this version)http://dx.doi.org/10.1149/1.2986748
Showing items related by title, author, creator and subject.
Gok, A.; Yilmaz, M.; Bıyıklı, N.; Topallı, K.; Okyay, A., K. (Institute of Physics Publishing, 2016)We designed all-silicon, multi-featured band-selective perfect absorbing surfaces based on CMOS compatible processes. The center wavelength of the band-selective absorber can be varied between 2 and 22 μm while a bandwidth ...
Serpengüzel, A.; Aydinli, A.; Bek, A. (1998)Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ...
Dhiman, R.; Petrunin V.; Rana, K.; Morgen P. (2011)Synthesis of structured silicon carbide materials can be accomplished using wooden materials as the carbon source, with various silicon impregnation techniques. We have explored the low cost synthesis of SiC by impregnation ...