Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
Thin Solid Films
411 - 418
Item Usage Stats
MetadataShow full item record
Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.
KeywordsAlInN/AlN/GaN single channel heterostructures
AlInN/AlN/GaN/AlN/GaN double channel heterostructures
Forward bias voltage
Schottky barrier diodes
Published Version (Please cite this version)http://dx.doi.org/10.1016/j.tsf.2013.09.026
Showing items related by title, author, creator and subject.
Ali, Syed Amjad; Ince, E.A. (IEEE, 2007)The statistical characteristics of impulsive noise differ greatly from those of Gaussian noise. Hence, the performance of conventional decoders, optimized for additive white Gaussian noise (AWGN) channels is not promising ...
Rahmati, M.; Duman, T. M. (Institute of Electrical and Electronics Engineers Inc., 2015)We study memoryless channels with synchronization errors as defined by a stochastic channel matrix allowing for symbol drop-outs or symbol insertions with particular emphasis on the binary and non-binary deletion channels. ...
Keskin, M. F.; Kurt, M. N.; Tutay, M. E.; Gezici, S.; Arikan, O. (Institute of Electrical and Electronics Engineers Inc., 2016)In this study, optimal channel switching (time sharing) strategies are investigated under average power and cost constraints in order to maximize the average number of correctly received symbols between a transmitter and ...