• About
  • Policies
  • What is open access
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Nanotechnology Research Center (NANOTAM)
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Nanotechnology Research Center (NANOTAM)
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

      Thumbnail
      View / Download
      1.1 Mb
      Author(s)
      Arslan, E.
      Turan, S.
      Gökden, S.
      Teke, A.
      Özbay, Ekmel
      Date
      2013
      Source Title
      Thin Solid Films
      Print ISSN
      0040-6090
      Publisher
      Elsevier
      Volume
      548
      Pages
      411 - 418
      Language
      English
      Type
      Article
      Item Usage Stats
      156
      views
      120
      downloads
      Abstract
      Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.
      Keywords
      AlInN/AlN/GaN single channel heterostructures
      AlInN/AlN/GaN/AlN/GaN double channel heterostructures
      Schottky contact
      Tunneling current
      Analytical expressions
      Current-voltage data
      Double channel
      Forward bias voltage
      Schottky contacts
      Single channels
      Temperature dependence
      Tunneling current
      Electron gas
      Electron tunneling
      Interfaces (materials)
      Schottky barrier diodes
      Heterojunctions
      Permalink
      http://hdl.handle.net/11693/26715
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.tsf.2013.09.026
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
      • Nanotechnology Research Center (NANOTAM) 1063
      Show full item record

      Related items

      Showing items related by title, author, creator and subject.

      • Thumbnail

        Performance analysis of turbo codes over Rician fading channels with impulsive noise 

        Ali, Syed Amjad; Ince, E.A. (IEEE, 2007)
        The statistical characteristics of impulsive noise differ greatly from those of Gaussian noise. Hence, the performance of conventional decoders, optimized for additive white Gaussian noise (AWGN) channels is not promising ...
      • Thumbnail

        Upper bounds on the capacity of deletion channels using channel fragmentation 

        Rahmati, M.; Duman, T. M. (Institute of Electrical and Electronics Engineers Inc., 2015)
        We study memoryless channels with synchronization errors as defined by a stochastic channel matrix allowing for symbol drop-outs or symbol insertions with particular emphasis on the binary and non-binary deletion channels. ...
      • Thumbnail

        Tree-based channel assignment schemes for multi-channel wireless sensor networks 

        Terzi, C.; Korpeoglu, I. (John Wiley & Sons Ltd., 2016)
        Many sensor node platforms used for establishing wireless sensor networks (WSNs) can support multiple radio channels for wireless communication. Therefore, rather than using a single radio channel for whole network, multiple ...

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      LoginRegister

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy