P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas
Author(s)
Date
2013Source Title
Applied Physics Letters
Print ISSN
0003-6951
Volume
103
Issue
26
Language
English
Type
ArticleItem Usage Stats
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Abstract
Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants. © 2013 AIP Publishing LLC.
Keywords
Capacitance voltage measurementsInGaN/GaN
Ingan/gan leds
InGaN/GaN quantum well
Injected electrons
Mg dopants
P-doping
Radiative recombination
Gases
Metallorganic chemical vapor deposition
Light emitting diodes