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      P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

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      Author(s)
      Zhang, Z.-H.
      Tiam Tan, S.
      Kyaw, Z.
      Liu W.
      Ji, Y.
      Ju, Z.
      Zhang X.
      Wei Sun X.
      Volkan Demir H.
      Date
      2013
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Volume
      103
      Issue
      26
      Language
      English
      Type
      Article
      Item Usage Stats
      237
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      264
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      Abstract
      Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants. © 2013 AIP Publishing LLC.
      Keywords
      Capacitance voltage measurements
      InGaN/GaN
      Ingan/gan leds
      InGaN/GaN quantum well
      Injected electrons
      Mg dopants
      P-doping
      Radiative recombination
      Gases
      Metallorganic chemical vapor deposition
      Light emitting diodes
      Permalink
      http://hdl.handle.net/11693/26694
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4858386
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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