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      • Department of Electrical and Electronics Engineering
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      Low thermal-mass LEDs: Size effect and limits

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      Author
      Lu, S.
      Liu W.
      Zhang, Z.-H.
      Tan, S.T.
      Ju, Z.
      Ji, Y.
      Zhang X.
      Zhang, Y.
      Zhu, B.
      Kyaw, Z.
      Hasanov, N.
      Sun X.W.
      Demir, Hilmi Volkan
      Date
      2014
      Source Title
      Optics Express
      Print ISSN
      10944087
      Publisher
      Optical Society of American (OSA)
      Volume
      22
      Issue
      26
      Pages
      32200 - 32207
      Language
      English
      Type
      Article
      Item Usage Stats
      138
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      107
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      Abstract
      In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. LTM-LED chips in 25 × 25 μm2, 50 × 50 μm2, 100 × 100 μm2 and 200 × 200 μm2 mesa sizes were fabricated and comparatively investigated. Here it was revealed that both the electrical and optical properties are improved by the decreasing chip size due to the reduced thermal mass. With a smaller chip size (from 200 μm to 50 μm), the device generally presents higher current density against the bias and higher power density against the current density. However, the 25 × 25 μm2 device behaves differently, limited by the fabrication margin limit of 10 μm. The underneath mechanisms of these observations are uncovered, and furthermore, based on the device model, it is proven that for a specific flip-chip fabrication process, the ideal size for LTM-LEDs with optimal power density performance can be identified. ©2014 Optical Society of America
      Keywords
      Fabrication
      Flip chip devices
      Optical properties
      Device modeling
      Electrical and optical properties
      Flip-chip configurations
      Optical characteristics
      Optimal power
      Power densities
      Size effects
      Thermal mass
      Light emitting diodes
      device failure analysis
      devices
      electronics
      energy transfer
      equipment design
      heat
      illumination
      semiconductor
      temperature
      Energy Transfer
      Equipment Design
      Equipment Failure Analysis
      Hot Temperature
      Lighting
      Miniaturization
      Semiconductors
      Temperature
      Permalink
      http://hdl.handle.net/11693/26620
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OE.22.032200
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      • Department of Electrical and Electronics Engineering 3524
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