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      The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD

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      Author(s)
      Cetđn, S.
      Sağlam, S.
      Ozcelđk, S.
      Özbay, Ekmel
      Date
      2014
      Source Title
      Gazi University Journal of Science
      Print ISSN
      13039709
      Publisher
      Gazi University Eti Mahallesi
      Volume
      27
      Issue
      4
      Pages
      1105 - 1110
      Language
      English
      Type
      Article
      Item Usage Stats
      168
      views
      45
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      Abstract
      Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples. ©2014 Gazi University Eti Mahallesi. All rights reserved.
      Keywords
      High resolution X-ray diffraction
      InGaN
      Light emitting diode
      Metalorganic chemical vapor deposition
      Multi quantum well
      Photoluminescence
      Flow rate
      Growth temperature
      Indium
      Light emitting diodes
      Metallorganic chemical vapor deposition
      Photoluminescence
      Sapphire
      Semiconducting aluminum compounds
      X ray diffraction
      X ray diffraction analysis
      Emission wavelength
      Growth conditions
      High resolution X ray diffraction
      InGaN
      Low-pressure MOCVD
      Multi quantum wells
      Room-temperature photoluminescence
      Sapphire substrates
      Semiconductor quantum wells
      Permalink
      http://hdl.handle.net/11693/26616
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Department of Physics 2485
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