The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
Date
2014Source Title
Gazi University Journal of Science
Print ISSN
13039709
Publisher
Gazi University Eti Mahallesi
Volume
27
Issue
4
Pages
1105 - 1110
Language
English
Type
ArticleItem Usage Stats
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Abstract
Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples. ©2014 Gazi University Eti Mahallesi. All rights reserved.
Keywords
High resolution X-ray diffractionInGaN
Light emitting diode
Metalorganic chemical vapor deposition
Multi quantum well
Photoluminescence
Flow rate
Growth temperature
Indium
Light emitting diodes
Metallorganic chemical vapor deposition
Photoluminescence
Sapphire
Semiconducting aluminum compounds
X ray diffraction
X ray diffraction analysis
Emission wavelength
Growth conditions
High resolution X ray diffraction
InGaN
Low-pressure MOCVD
Multi quantum wells
Room-temperature photoluminescence
Sapphire substrates
Semiconductor quantum wells