Improving the efficiency enhancement of photonic crystal based InGaN solar cell by using a GaN Cap Layer
Advances in Materials Science and Engineering
Hindawi Publishing Corporation
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We studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer. © 2014 T. F. Gundogdu et al.
GaN cap layers
High indium contents
Solar cell design