Improving the efficiency enhancement of photonic crystal based InGaN solar cell by using a GaN Cap Layer
Date
2014
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Source Title
Advances in Materials Science and Engineering
Print ISSN
16878434
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Publisher
Hindawi Publishing Corporation
Volume
2014
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Language
English
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Abstract
We studied a high indium content (0.8) InGaN based solar cell design where the active InGaN layer is sandwiched between a GaN cap layer and a GaN spacer layer. The incorporation of the sacrificial cap layer allows for the etching of the front surface without removing the active InGaN resulting in a 50% enhancement of the short-circuit current density for a 15 nm-thick InGaN layer. © 2014 T. F. Gundogdu et al.