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      Silicon nanoparticle charge trapping memory cell

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      Author(s)
      El-Atab, N.
      Ozcan, A.
      Alkis, S.
      Okyay, Ali Kemal
      Nayfeh, A.
      Date
      2014
      Source Title
      Physica Status Solidi - Rapid Research Letters
      Print ISSN
      1862-6254
      Publisher
      Wiley-VCH Verlag
      Volume
      8
      Issue
      7
      Pages
      629 - 633
      Language
      English
      Type
      Article
      Item Usage Stats
      134
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      96
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      Abstract
      A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and tunneling oxide. Spin coating technique is used to deposit Si NPs across the sample between Al2O3 steps. The Si nanoparticle memory exhibits a threshold voltage (Vt) shift of 2.9 V at a negative programming voltage of -10 V indicating that holes are emitted from channel to charge trapping layer. The negligible measured Vt shift without the nanoparticles and the good re- tention of charges (>10 years) with Si NPs confirm that the Si NPs act as deep energy states within the bandgap of the Al2O3 layer. In order to determine the mechanism for hole emission, we study the effect of the electric field across the tunnel oxide on the magnitude and trend of the Vt shift. The Vt shift is only achieved at electric fields above 1 MV/cm. This high field indicates that tunneling is the main mechanism. More specifically, phonon-assisted tunneling (PAT) dominates at electric fields between 1.2 MV/cm < E < 2.1 MV/cm, while Fowler-Nordheim tunneling leads at higher fields (E > 2.1 MV/cm). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
      Keywords
      Atomic layer deposition
      Charge trapping memories
      Phonon-assisted tunneling
      Aluminum
      Atomic layer deposition
      Charge trapping
      Deposition
      Electric fields
      Nanoparticles
      Phonons
      Zinc oxide
      Charge trapping layers
      Charge trapping memory
      Fowler-Nordheim tunneling
      Phonon assisted tunneling
      Programming voltage
      Si nanoparticles
      Silicon nanoparticles
      ZnO
      Silicon
      Permalink
      http://hdl.handle.net/11693/26534
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/pssr.201409157
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
      • Nanotechnology Research Center (NANOTAM) 1063
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