Silicon nanoparticle charge trapping memory cell
Physica Status Solidi - Rapid Research Letters
629 - 633
Item Usage Stats
A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and tunneling oxide. Spin coating technique is used to deposit Si NPs across the sample between Al2O3 steps. The Si nanoparticle memory exhibits a threshold voltage (Vt) shift of 2.9 V at a negative programming voltage of -10 V indicating that holes are emitted from channel to charge trapping layer. The negligible measured Vt shift without the nanoparticles and the good re- tention of charges (>10 years) with Si NPs confirm that the Si NPs act as deep energy states within the bandgap of the Al2O3 layer. In order to determine the mechanism for hole emission, we study the effect of the electric field across the tunnel oxide on the magnitude and trend of the Vt shift. The Vt shift is only achieved at electric fields above 1 MV/cm. This high field indicates that tunneling is the main mechanism. More specifically, phonon-assisted tunneling (PAT) dominates at electric fields between 1.2 MV/cm < E < 2.1 MV/cm, while Fowler-Nordheim tunneling leads at higher fields (E > 2.1 MV/cm). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KeywordsAtomic layer deposition
Charge trapping memories
Atomic layer deposition
Charge trapping layers
Charge trapping memory
Phonon assisted tunneling
Published Version (Please cite this version)http://dx.doi.org/10.1002/pssr.201409157
Showing items related by title, author, creator and subject.
Investigation on electrical charging/discharging properties of thin ps/pmma polymeric films by dynamic x-ray photoelectron spectroscopy Sezen, Hikmet (Bilkent University, 2008)Electrical charging/discharging properties of thin layers of spin coated pure PS polystyrene (PS), and pure poly(methyl methacrylate), (PMMA) and an immiscible PS/PMMA blend are studied with externally applied DC and ...
Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide El-Atab, N.; Turgut, B. B.; Okyay, Ali Kemal; Nayfeh, M.; Nayfeh, A. (Springer New York LLC, 2015)In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the ...
El-Atab, N.; Turgut, Berk Berkan; Okyay, Ali Kemal; Nayfeh, A. (ECS, 2015-05)In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> oxides is studied. Using high frequency (1 MHz) ...