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      Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

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      Author(s)
      Kumar, M.
      Tekcan, B.
      Okyay, Ali Kemal
      Date
      2014
      Source Title
      Current Applied Physics: physics, chemistry and materials science
      Print ISSN
      1567-1739
      Publisher
      Elsevier BV
      Volume
      14
      Issue
      12
      Pages
      1703 - 1706
      Language
      English
      Type
      Article
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      Abstract
      A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and increased photo to dark current contrast ratio was achieved at 10 V. It was found that the dark current was drastically reduced by seven orders of magnitude at 10 V compared to samples without HfO2 insulating layer. The observed decrease in dark current is attributed to the large barrier height which is due to introduction of HfO2 insulating layer and the calculated barrier height was obtained as 0.95 eV. The peak responsivity of HfO2 inserted device was 0.44 mA/W at bias voltage of 15 V.
      Keywords
      Atomic layer deposited HfO2
      Atomic layer deposited
      GaN
      Metal-insulator-semiconductors
      Ultra-violet photodetectors
      UV photodetectors
      Permalink
      http://hdl.handle.net/11693/26517
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.cap.2014.10.001
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      • Department of Electrical and Electronics Engineering 4011
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