Indium rich InGaN solar cells grown by MOCVD
Author(s)
Date
2014Source Title
Journal of Materials Science: Materials in Electronics
Print ISSN
0957-4522
Publisher
Springer New York LLC
Volume
25
Issue
8
Pages
3652 - 3658
Language
English
Type
ArticleItem Usage Stats
216
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197
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Abstract
This study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from 8.8 to 7.1 % in Sample A, 15.7-7.1 % in Sample B, and 26.6-15.1 % in Sample C. The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure. Sample B exhibits better performance with a short-circuit current density of 6 mA/cm2, open-circuit voltage of 0.25 V, fill factor of 39.13 %, and the best efficiency measured under a standard solar simulator with one-sun air mass 1.5 global light sources (100 mW/cm2) at room temperature for finished devices was 0.66 %.
Keywords
EpilayersGallium alloys
Indium
Light sources
Metallorganic chemical vapor deposition
Open circuit voltage
Sapphire
Better performance
Current voltage measurement
Room temperature
Sapphire substrates
Solar cell devices
Solar cell structures
Solar simulator
X-ray reciprocal space mapping
Solar cells
Permalink
http://hdl.handle.net/11693/26509Published Version (Please cite this version)
http://dx.doi.org/10.1007/s10854-014-2070-4Collections
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