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dc.contributor.authorTekcan, B.en_US
dc.contributor.authorAlkis, S.en_US
dc.contributor.authorAlevli, M.en_US
dc.contributor.authorDietz, N.en_US
dc.contributor.authorOrtac, B.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2016-02-08T10:59:12Z
dc.date.available2016-02-08T10:59:12Z
dc.date.issued2014en_US
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/11693/26395
dc.description.abstractWe present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under-1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as (3.05 × 10-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes. © 2014 IEEE.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Electron Device Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LED.2014.2336795en_US
dc.subjectindium nitrideen_US
dc.subjectnanocrystalsen_US
dc.subjectnear-infrared (NIR)en_US
dc.subjectPhotodetectoren_US
dc.subjectChemical vapor depositionen_US
dc.subjectLaser ablationen_US
dc.subjectNanocrystalsen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotonsen_US
dc.subjectThin filmsen_US
dc.subjectElectrical leakageen_US
dc.subjectHigh pressure chemical vapor depositionen_US
dc.subjectIndium nitrideen_US
dc.subjectNear infra reden_US
dc.subjectNear-infrared rangeen_US
dc.subjectPhotoresponsivityen_US
dc.subjectThin insulating filmen_US
dc.subjectWavelength rangesen_US
dc.subjectInfrared devicesen_US
dc.titleA near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablationen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage936en_US
dc.citation.epage938en_US
dc.citation.volumeNumber35en_US
dc.citation.issueNumber9en_US
dc.identifier.doi10.1109/LED.2014.2336795en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorBıyıklı, Necmi
dc.contributor.bilkentauthorOkyay, Ali Kemal


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