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      Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

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      Author(s)
      El-Atab, N.
      Ozcan, A.
      Alkis, S.
      Okyay, Ali Kemal
      Nayfeh, A.
      Date
      2014
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Volume
      104
      Pages
      013112-1 - 013112-4
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (ΔVt) vs. programming voltage is studied with and without the silicon nanoparticles. Applying -1 V for 5 s at the gate of the memory with nanoparticles results in a ΔVt of 3.4 V, and the memory window can be up to 8 V with an excellent retention characteristic (>10 yr). Without nanoparticles, at -1 V programming voltage, the ΔVt is negligible. In order to get ΔVt of 3.4 V without nanoparticles, programming voltage in excess of 10 V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1 V the electric field across the 3.6 nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the ΔVt vs. electric field across the tunnel oxide shows square root dependence at low fields (E 1 MV/cm) and a square dependence at higher fields (E > 2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields. © 2014 AIP Publishing LLC.
      Keywords
      Atomic layer deposited
      Charge trapping layers
      Charge trapping memory
      Phonon assisted tunneling
      Retention characteristics
      Silicon nanoparticles
      Square-root dependence
      Threshold voltage shifts
      Atomic layer deposition
      Charge trapping
      Electric fields
      Silicon
      Zinc
      Zinc oxide
      Nanoparticles
      Permalink
      http://hdl.handle.net/11693/26376
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4861590
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      • Department of Electrical and Electronics Engineering 3702
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