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dc.contributor.authorCiraci, S.en_US
dc.contributor.authorBatra, I. P.en_US
dc.date.accessioned2016-02-08T10:57:44Z
dc.date.available2016-02-08T10:57:44Z
dc.date.issued1987en_US
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/11693/26284
dc.description.abstractResults of self-consistent energy-minimization calculations provide strong evidence that the ordered phases in epitaxially grown Ga1-xAlxAs and strained Si1-xGex alloys are metastable, in the sense that segregation into constituents is favored. We show that the long-range order in intermediate metastable structures leads to significant changes in the electronic properties of semiconductor superlattices. Segregation gives rise to micro-quantum-wells with staggered band lineup and multiple confined states in the potential barrier. © 1987 The American Physical Society.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysical Review Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.58.2114en_US
dc.titleLong-range order and segregation in semiconductor superlatticesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage2114en_US
dc.citation.epage2117en_US
dc.citation.volumeNumber58en_US
dc.citation.issueNumber20en_US
dc.identifier.doi10.1103/PhysRevLett.58.2114en_US


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