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      Electronic structure of strained Sin / Gen (001) superlattices

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      Author(s)
      Çıracı, Salim
      Gülseren, O.
      Ellialtioğlu, Ş.
      Date
      1988
      Source Title
      Solid State Communications
      Print ISSN
      0038-1098
      Publisher
      Pergamon Press
      Volume
      65
      Issue
      11
      Pages
      1285 - 1290
      Language
      English
      Type
      Article
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      Abstract
      Using the empirical tight binding method we have investigated the electronic properties of the Sin/Gen(001) strained superlattices as a function of the superlattice periodicity and the band misfit. For n ≥ 4 we have found that first and second conduction band states are localized in Si. The hole states localized in Ge appear for n ≥ 4. The difference between the direct and indirect band gaps is reduced from 2.01 eV for bulk Si to 0.01 eV for n=6 which can be considered to be quasi-direct. For the cases n=6 and n=8, the band gap might become direct for large values of band misfit. © 1988.
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      http://hdl.handle.net/11693/26277
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/0038-1098(88)90078-6
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