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dc.contributor.authorYalabik, M. C.en_US
dc.contributor.authorDiff, K.en_US
dc.date.accessioned2016-02-08T10:57:08Z
dc.date.available2016-02-08T10:57:08Z
dc.date.issued1989en_US
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/11693/26248
dc.description.abstractA quantum mechanical simulation method of charge transport in very small semiconductor devices, based on the numerical solution of the time-dependent Schrödinger equation (coupled self-consistently to the Poisson equation to determine the electrostatic potential in the device), is presented. Carrier transport is considered within the effective mass approximation, while the effects of the electron-phonon interaction are included in an approximation that is consistent with the results of the perturbation theory and gives the correct two-point time correlation function. Numerical results for the transient behavior of a planar ultrasubmicrometer three-dimensional GaAs MESFET (gate length of 26 nm) are also presented. They indicate that extremely fast gate-step response times (switching times) characterize such short-channel GaAs devices. © 1989 IEEEen_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Transactions on Electron Devicesen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/16.24341en_US
dc.subjectElectronsen_US
dc.subjectPhononsen_US
dc.subjectQuantum theoryen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectTransistorsen_US
dc.subjectCharge transporten_US
dc.subjectMESFETen_US
dc.subjectSwitching timesen_US
dc.subjectVery small semiconductor devicesen_US
dc.subjectSemiconductor devicesen_US
dc.titleQuantum mechanical simulation of charge transport in very small semiconductor structuresen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage1009en_US
dc.citation.epage1013en_US
dc.citation.volumeNumber36en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1109/16.24341en_US
dc.publisherIEEEen_US


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