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      Quantum mechanical simulation of charge transport in very small semiconductor structures

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      Author(s)
      Yalabik, M. C.
      Diff, K.
      Date
      1989
      Source Title
      IEEE Transactions on Electron Devices
      Print ISSN
      0018-9383
      Publisher
      IEEE
      Volume
      36
      Issue
      6
      Pages
      1009 - 1013
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      A quantum mechanical simulation method of charge transport in very small semiconductor devices, based on the numerical solution of the time-dependent Schrödinger equation (coupled self-consistently to the Poisson equation to determine the electrostatic potential in the device), is presented. Carrier transport is considered within the effective mass approximation, while the effects of the electron-phonon interaction are included in an approximation that is consistent with the results of the perturbation theory and gives the correct two-point time correlation function. Numerical results for the transient behavior of a planar ultrasubmicrometer three-dimensional GaAs MESFET (gate length of 26 nm) are also presented. They indicate that extremely fast gate-step response times (switching times) characterize such short-channel GaAs devices. © 1989 IEEE
      Keywords
      Electrons
      Phonons
      Quantum theory
      Semiconducting gallium arsenide
      Transistors
      Charge transport
      MESFET
      Switching times
      Very small semiconductor devices
      Semiconductor devices
      Permalink
      http://hdl.handle.net/11693/26248
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/16.24341
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      • Department of Physics 2551
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