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      Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

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      Author(s)
      Zhang, Zi-Hui
      Ju, Z.
      Liu W.
      Tan S.T.
      Ji Y.
      Kyaw, Z.
      Zhang X.
      Hasanov N.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2014
      Source Title
      Optics Letters
      Print ISSN
      0146-9592
      Publisher
      Optical Society of America
      Volume
      39
      Issue
      8
      Pages
      2483 - 2486
      Language
      English
      Type
      Article
      Item Usage Stats
      257
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      315
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      Abstract
      The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/ GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.
      Keywords
      Efficiency
      Gallium nitride
      Hole mobility
      Light emitting diodes
      Electron blocking layer
      Electron overflow
      External quantum efficiency
      GaN layers
      Hole injection
      Hole transport mechanism
      Ingan/gan lightemitting diodes (LEDs)
      Optical output power
      Electron injection
      Permalink
      http://hdl.handle.net/11693/26224
      Published Version (Please cite this version)
      http://dx.doi.org/10.1364/OL.39.002483
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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