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dc.contributor.authorGulseren, O.en_US
dc.contributor.authorCiraci, S.en_US
dc.date.accessioned2016-02-08T10:56:00Z
dc.date.available2016-02-08T10:56:00Z
dc.date.issued1991en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/26168
dc.description.abstractUsing the Green function formalism with layer orbitals we studied the electronic structure of a Si δ-layer in germanium. We found two-dimensional parabolic subbands near the band edges. This approach is extended to treat the electronic structure of a single quantum well without invoking the periodically repeating models.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.relation.isversionofhttps://doi.org/10.1088/0268-1242/6/10/009en_US
dc.subjectGreen Functionen_US
dc.subjectQuantum Wellsen_US
dc.subjectQuantum Theoryen_US
dc.subjectSemiconducting Germaniumen_US
dc.subjectSemiconducting Siliconen_US
dc.subjectSemiconducting Filmsen_US
dc.titleElectronic structure of a Si delta-layer embedded in Ge(001)en_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage1002en_US
dc.citation.epage1005en_US
dc.citation.volumeNumber6en_US
dc.citation.issueNumber10en_US
dc.identifier.doi10.1088/0268-1242/6/10/009en_US
dc.publisherInstitute of Physics Publishingen_US


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