Electronic structure of a Si delta-layer embedded in Ge(001)
Semiconductor Science and Technology
Institute of Physics Publishing
1002 - 1005
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Using the Green function formalism with layer orbitals we studied the electronic structure of a Si δ-layer in germanium. We found two-dimensional parabolic subbands near the band edges. This approach is extended to treat the electronic structure of a single quantum well without invoking the periodically repeating models.