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dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorEllialtioǧlu, R.en_US
dc.contributor.authorAllakhverdiev, K. R.en_US
dc.contributor.authorEllialtioǧlu, S.en_US
dc.contributor.authorGasanly, N. M.en_US
dc.date.accessioned2016-02-08T10:54:22Z
dc.date.available2016-02-08T10:54:22Z
dc.date.issued1993en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/26055
dc.description.abstractPolarized Raman scattering spectra of TlGaS2 layer crystals have been studied for the first time as a function of temperature between 8.5 and 295 K. No evidence for a soft mode behaviour has been found. The anomalies observed in the temperature dependence of low- and high-frequency phonon modes at ∼ 250 and ∼ 180 K, respectively, are explained as due to the phase transitions. It is supposed that the phase transitions are caused by the deformation of structural complexes GaS4, rather than by slippage of Tl atom channels in [110] and [110] directions, which is mainly responsible for the appearance of the low-temperature ferroelectric phase transitions in other representatives of TlBX2 layer compounds. © 1993.en_US
dc.language.isoEnglishen_US
dc.source.titleSolid State Communicationsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/0038-1098(93)90230-Ken_US
dc.subjectCrystal defectsen_US
dc.subjectCrystal symmetryen_US
dc.subjectCrystalsen_US
dc.subjectFerroelectricityen_US
dc.subjectLow temperature effectsen_US
dc.subjectPhase transitionsen_US
dc.subjectPhononsen_US
dc.subjectRaman scatteringen_US
dc.subjectSemiconductor materialsen_US
dc.subjectSpectrum analysisen_US
dc.subjectLow temperature phase transitionsen_US
dc.subjectSoft mode behaviouren_US
dc.subjectStructural complexes deformationen_US
dc.subjectThallium gallium sulfidesen_US
dc.subjectThallium compoundsen_US
dc.titleLow-temperature phase transitions in TlGaS2 layer crystalsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage387en_US
dc.citation.epage390en_US
dc.citation.volumeNumber88en_US
dc.citation.issueNumber5en_US
dc.identifier.doi10.1016/0038-1098(93)90230-Ken_US
dc.publisherPergamon Pressen_US
dc.contributor.bilkentauthorAydınlı, Atilla


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