Show simple item record

dc.contributor.authorCompaan, A.en_US
dc.contributor.authorSavage, M. E.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorAzfar, T.en_US
dc.date.accessioned2016-02-08T10:53:25Z
dc.date.available2016-02-08T10:53:25Z
dc.date.issued1994en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/25990
dc.description.abstractWe have used Raman scattering to follow the progress of multiple-pulse (sub-melt-threshold) laser annealing in doped hydrogenated amorphous silicon films (a-Si:H) on glass. In phosphorous-doped a-Si:H the Raman signal shows that recrystallization begins with the first laser pulse but the multiple pulses are needed to generate the highest hole concentrations of ∼6×1020 cm-3. In boron-doped a-Si:H the electron concentration reaches ∼1×1021 cm-3 after laser anneal which produces a dip rather than a peak near the phonon line as a consequence of a negative Fano-interference parameter, q. The results show that Raman scattering can be used to obtain carrier concentrations in poly-silicon provided that wavelength-dependent Fano interference effects are properly included. © 1994.en_US
dc.language.isoEnglishen_US
dc.source.titleSolid State Communicationsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/0038-1098(94)90935-0en_US
dc.subjectAmorphous filmsen_US
dc.subjectAnnealingen_US
dc.subjectCharge carriersen_US
dc.subjectConcentration (process)en_US
dc.subjectCrystalline materialsen_US
dc.subjectElectron transport propertiesen_US
dc.subjectLaser applicationsen_US
dc.subjectLaser pulsesen_US
dc.subjectMathematical modelsen_US
dc.subjectRaman scatteringen_US
dc.subjectRecrystallization (metallurgy)en_US
dc.subjectSemiconductor dopingen_US
dc.subjectElectron concentrationen_US
dc.subjectFano interference effectsen_US
dc.subjectLaser annealingen_US
dc.subjectPolycrystalline siliconen_US
dc.subjectSemiconducting siliconen_US
dc.titleRaman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:Hen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage77en_US
dc.citation.epage81en_US
dc.citation.volumeNumber90en_US
dc.citation.issueNumber2en_US
dc.identifier.doi10.1016/0038-1098(94)90935-0en_US
dc.publisherPergamon Pressen_US
dc.contributor.bilkentauthorAydınlı, Atilla


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record