Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems
Journal of Physics Condensed Matter
Institute of Physics Publishing Ltd.
5113 - 5127
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We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.
KeywordsAlloy disorder scattering
Axial magnetic field
Electron impurity interaction
Homogeneous background scattering
Interface roughness scattering
Remote impurity scattering
Electron energy levels
Low temperature effects
Magnetic field effects
Semiconducting gallium arsenide
Electron transport properties
Published Version (Please cite this version)http://dx.doi.org/10.1088/0953-8984/6/27/020
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