Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems
Author
Tanatar, Bilal
Constantinou, N. C.
Date
1994Source Title
Journal of Physics Condensed Matter
Print ISSN
0953-8984
Publisher
Institute of Physics Publishing Ltd.
Volume
6
Issue
27
Pages
5113 - 5127
Language
English
Type
ArticleItem Usage Stats
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Abstract
We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.
Keywords
Alloy disorder scatteringAxial magnetic field
Electron impurity interaction
Homogeneous background scattering
Interface roughness scattering
Remote impurity scattering
Anisotropy
Charge carriers
Crystal impurities
Electron energy levels
Electron scattering
Low temperature effects
Magnetic field effects
Mathematical models
Semiconducting gallium arsenide
Electron transport properties
Permalink
http://hdl.handle.net/11693/25954Published Version (Please cite this version)
http://dx.doi.org/10.1088/0953-8984/6/27/020Collections
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