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      Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems

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      Author
      Tanatar, Bilal
      Constantinou, N. C.
      Date
      1994
      Source Title
      Journal of Physics Condensed Matter
      Print ISSN
      0953-8984
      Publisher
      Institute of Physics Publishing Ltd.
      Volume
      6
      Issue
      27
      Pages
      5113 - 5127
      Language
      English
      Type
      Article
      Item Usage Stats
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      119
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      Abstract
      We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.
      Keywords
      Alloy disorder scattering
      Axial magnetic field
      Electron impurity interaction
      Homogeneous background scattering
      Interface roughness scattering
      Remote impurity scattering
      Anisotropy
      Charge carriers
      Crystal impurities
      Electron energy levels
      Electron scattering
      Low temperature effects
      Magnetic field effects
      Mathematical models
      Semiconducting gallium arsenide
      Electron transport properties
      Permalink
      http://hdl.handle.net/11693/25954
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/0953-8984/6/27/020
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      • Department of Physics 2299
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