Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition
Date
1995
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Source Title
Solid State Communications
Print ISSN
0038-1098
Electronic ISSN
Publisher
Pergamon Press
Volume
95
Issue
7
Pages
443 - 447
Language
English
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Journal Title
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Abstract
a-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL, infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of annealing on the PL properties of the films have been found to depend on initial stoichiometry of the films. © 1995.
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Keywords
A. thin films , D. optical properties , E. luminescence , Annealing , Chemical vapor deposition , Gases , Optical properties , Photoluminescence , Semiconducting silicon , Stoichiometry , Thin films , X ray diffraction , Low temperature plasma enhanced chemical vapor deposition , Quasi one dimensional , Quasi zero dimensional , Semiconductor nanocrystal , Silicon oxides , Visible photoluminescence , Oxides