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      Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition

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      Author
      Timofeev, F. N.
      Aydinli, A.
      Ellialtioglu, R.
      Turkoglu, K.
      Gure, M.
      Mikhailov, V. N.
      Lavrova, O. A.
      Date
      1995
      Source Title
      Solid State Communications
      Print ISSN
      0038-1098
      Publisher
      Pergamon Press
      Volume
      95
      Issue
      7
      Pages
      443 - 447
      Language
      English
      Type
      Article
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      Abstract
      a-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL, infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of annealing on the PL properties of the films have been found to depend on initial stoichiometry of the films. © 1995.
      Keywords
      A. thin films
      D. optical properties
      E. luminescence
      Annealing
      Chemical vapor deposition
      Gases
      Optical properties
      Photoluminescence
      Semiconducting silicon
      Stoichiometry
      Thin films
      X ray diffraction
      Low temperature plasma enhanced chemical vapor deposition
      Quasi one dimensional
      Quasi zero dimensional
      Semiconductor nanocrystal
      Silicon oxides
      Visible photoluminescence
      Oxides
      Permalink
      http://hdl.handle.net/11693/25915
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/0038-1098(95)00299-5
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