Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals
Allakhverdiev, K. R.
Gasanly, N. M.
Solid State Communications
777 - 782
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Low-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel. © 1995.
D. optical properties
D. phase transitions
Low temperature effects
Low temperature photoluminescence spectra
Thallium indium gallium sulfide
Semiconducting indium compounds