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      Laser-micromachined millimeter-wave photonic band-gap cavity structures

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      Author
      Özbay, Ekmel
      Tuttle, G.
      McCalmont, J. S.
      Sigalas, M.
      Biswas, R.
      Soukoulis, C. M.
      Ho, K. M.
      Date
      1995
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics
      Volume
      67
      Issue
      14
      Pages
      1969 - 1971
      Language
      English
      Type
      Article
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      Abstract
      We have used laser-micromachined alumina substrates to build a three-dimensional photonic band-gap crystal. The rod-based structure has a three-dimensional full photonic band gap between 90 and 100 GHz. The high resistivity of alumina results in a typical attenuation rate of 15 dB per unit cell within the band gap. By removing material, we have built defects which can be used as millimeter-wave cavity structures. The resulting quality ~Q! factors of the millimeter-wave cavity structures were as high as 1000 with a peak transmission of 10 dB below the incident signal. © 1995 American Institute of Physics.
      Keywords
      Alumina
      Attenuation
      Electric conductivity
      Electromagnetic wave transmission
      Energy gap
      Millimeter waves
      Natural frequencies
      Numerical methods
      Q factor measurement
      Three dimensional
      Band gap cavity structures
      Laser machined wafer
      Photonic band gap
      Transfer matrix method
      Crystal defects
      Permalink
      http://hdl.handle.net/11693/25868
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.114756
      Collections
      • Department of Electrical and Electronics Engineering 3337
      • Department of Physics 2149
      • Institute of Materials Science and Nanotechnology 1580
      • Nanotechnology Research Center 867

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