Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride
Date
1996Source Title
Solid State Communications
Print ISSN
0038-1098
Publisher
Pergamon Press
Volume
98
Issue
4
Pages
273 - 277
Language
English
Type
ArticleItem Usage Stats
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Abstract
Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH4), nitrogen and ammonia (NH3). Most films exhibit visible photoluminescence (PL) and some emit strong PL after annealing. While films grown without NH3 exhibit PL in the deep red, those grown with NH3 show PL in the green. The PL properties of these films with no oxygen (O) content are similar to those of silicon oxide (SiOx) films and porous Si. Using infrared and X-ray Photoelectron Spectroscopy, we suggest that PL from a-SiNx:H films originate from Si clusters which form during PECVD and crystallize upon annealing. We propose that the presence of O is not necessary for efficient PL.
Keywords
A. thin filmsD. optical properties
E. luminescence
Ammonia
Amorphous materials
Annealing
Chemical vapor deposition
Crystallization
Fourier transform infrared spectroscopy
Hydrogenation
Optical properties
Photoluminescence
Plasma applications
Thin films
X ray photoelectron spectroscopy
Hydrogenated amorphous silicon nitride
Plasma enhanced chemical vapor deposition
Rapid thermal processor
Valancy
Silicon nitride