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      Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride

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      Author(s)
      Aydınlı, A.
      Serpengüzel, A.
      Vardar, D.
      Date
      1996
      Source Title
      Solid State Communications
      Print ISSN
      0038-1098
      Publisher
      Pergamon Press
      Volume
      98
      Issue
      4
      Pages
      273 - 277
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH4), nitrogen and ammonia (NH3). Most films exhibit visible photoluminescence (PL) and some emit strong PL after annealing. While films grown without NH3 exhibit PL in the deep red, those grown with NH3 show PL in the green. The PL properties of these films with no oxygen (O) content are similar to those of silicon oxide (SiOx) films and porous Si. Using infrared and X-ray Photoelectron Spectroscopy, we suggest that PL from a-SiNx:H films originate from Si clusters which form during PECVD and crystallize upon annealing. We propose that the presence of O is not necessary for efficient PL.
      Keywords
      A. thin films
      D. optical properties
      E. luminescence
      Ammonia
      Amorphous materials
      Annealing
      Chemical vapor deposition
      Crystallization
      Fourier transform infrared spectroscopy
      Hydrogenation
      Optical properties
      Photoluminescence
      Plasma applications
      Thin films
      X ray photoelectron spectroscopy
      Hydrogenated amorphous silicon nitride
      Plasma enhanced chemical vapor deposition
      Rapid thermal processor
      Valancy
      Silicon nitride
      Permalink
      http://hdl.handle.net/11693/25823
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/0038-1098(96)00064-6
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      • Department of Physics 2484
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