Simplified calculations of band-gap renormalization in quantum-wells
Author
Güven, K.
Tanatar, Bilal
Date
1996Source Title
Superlattices and Microstructures
Print ISSN
0749-6036
Publisher
Academic Press
Volume
20
Issue
1
Pages
81 - 85
Language
English
Type
ArticleItem Usage Stats
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Abstract
Non-linear optical properties of photoexcited semiconductor quantum-wells are of interest because of their opto-electronic device application possibilities. Many-body interactions of the optically created electrons and holes lead to the band-gap renormalization which in turn determines the absorption spectra of such systems. We employ a simplified approach to calculate the band-gap renormalization in quantum-well systems by considering the interaction of a single electron-hole pair with the collective excitations (plasmons). This method neglects the exchange-correlation effects but fully accounts for the Coulomb-hole term in the single-particle self-energy. We demonstrate that the density, temperature, and well-width dependence of the band-gap renormalization for GaAs quantum-wells within our model is in good agreement with the experimental results. © 1996 Academic Press Limited.
Keywords
Absorption spectroscopyCalculations
Electrons
Energy gap
Nonlinear optics
Optical properties
Optoelectronic devices
Perturbation techniques
Semiconducting gallium arsenide
Semiconductor device models
Band gap renormalization
Coulomb hole term
Electron hole pair interaction
Exchange correlation effects
Photoexcitation
Plasmons
Single particle self energy
Semiconductor quantum wells