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      Simplified calculations of band-gap renormalization in quantum-wells

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      Author
      Güven, K.
      Tanatar, Bilal
      Date
      1996
      Source Title
      Superlattices and Microstructures
      Print ISSN
      0749-6036
      Publisher
      Academic Press
      Volume
      20
      Issue
      1
      Pages
      81 - 85
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Non-linear optical properties of photoexcited semiconductor quantum-wells are of interest because of their opto-electronic device application possibilities. Many-body interactions of the optically created electrons and holes lead to the band-gap renormalization which in turn determines the absorption spectra of such systems. We employ a simplified approach to calculate the band-gap renormalization in quantum-well systems by considering the interaction of a single electron-hole pair with the collective excitations (plasmons). This method neglects the exchange-correlation effects but fully accounts for the Coulomb-hole term in the single-particle self-energy. We demonstrate that the density, temperature, and well-width dependence of the band-gap renormalization for GaAs quantum-wells within our model is in good agreement with the experimental results. © 1996 Academic Press Limited.
      Keywords
      Absorption spectroscopy
      Calculations
      Electrons
      Energy gap
      Nonlinear optics
      Optical properties
      Optoelectronic devices
      Perturbation techniques
      Semiconducting gallium arsenide
      Semiconductor device models
      Band gap renormalization
      Coulomb hole term
      Electron hole pair interaction
      Exchange correlation effects
      Photoexcitation
      Plasmons
      Single particle self energy
      Semiconductor quantum wells
      Permalink
      http://hdl.handle.net/11693/25805
      Published Version (Please cite this version)
      http://dx.doi.org/10.1006/spmi.1996.0052
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      • Department of Physics 2299
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