Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wires
Bennett, C. R.
Constantinou, N. C.
Solid State Communications
509 - 512
Item Usage Stats
MetadataShow full item record
We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. Interactions of the scattered electron with neutral plasma components and phonons are treated on an equal footing within the random-phase approximation. Coupled mode effects substantially change the transport properties of the system at low temperatures. Particularly, the "plasmon-like" and "LO-phonon-like" excitations yield comparable rates which, as a consequence of the singular nature of the ID density of states, can be large at the threshold. This is in contrast to room temperature results where only the LO-phonon mode contributes significantly to the rate. The density and temperature dependence of the power loss reveals that dynamical screening effects are important, and energy-momentum conservation cannot be satisfied above a certain density for a given initial energy.
Electron energy levels
Electron transport properties
Electronic density of states
Semiconductor device structures
Dynamical screening effects
Electron hole plasma
Energy momentum conservation
Hot electron momentum relaxation
Hot electron scattering
Neutral plasma components
Photoexcited quasi one dimensional structure
Plasmon phonon coupling
Random phase approximation
Semiconductor quantum wires
Published Version (Please cite this version)http://dx.doi.org/10.1016/0038-1098(96)00266-9
Showing items related by title, author, creator and subject.
Balkan, N.; O'Brien-Davies, A.; Thoms, A. B.; Potter, R. J.; Poolton, N.; Adams, M. J.; Masum J.; Bek, A.; Serpenguzel, A.; Aydinli, A.; Roberts J. S. (SPIE - The International Society for Optical Engineering, 1998-01)The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga 1-xAlxAs p- n ...
Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °c Akram, R.; Dede, M.; Oral, A. (American Vacuum Society, 2009)The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. ...
Nappini S.; Matruglio A.; Naumenko D.; Dal Zilio S.; Lazzarino M.; De Groot F.M.F.; Kocabas C.; Balci O.; Magnano E. (American Chemical Society, 2017)Prussian dyes are characterized by interesting photomagnetic properties due to the photoinduced electron transfer involved in the Fe oxidation and spin state changes. Ferromagnetic Prussian blue (PB) in contact with titanium ...