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      Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wires

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      Author(s)
      Bennett, C. R.
      Tanatar, Bilal
      Constantinou, N. C.
      Date
      1996
      Source Title
      Solid State Communications
      Print ISSN
      0038-1098
      Publisher
      Elsevier
      Volume
      99
      Issue
      7
      Pages
      509 - 512
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. Interactions of the scattered electron with neutral plasma components and phonons are treated on an equal footing within the random-phase approximation. Coupled mode effects substantially change the transport properties of the system at low temperatures. Particularly, the "plasmon-like" and "LO-phonon-like" excitations yield comparable rates which, as a consequence of the singular nature of the ID density of states, can be large at the threshold. This is in contrast to room temperature results where only the LO-phonon mode contributes significantly to the rate. The density and temperature dependence of the power loss reveals that dynamical screening effects are important, and energy-momentum conservation cannot be satisfied above a certain density for a given initial energy.
      Keywords
      Approximation theory
      Electron energy levels
      Electron scattering
      Electron transport properties
      Electronic density of states
      Energy conservation
      Hot carriers
      Phonons
      Random processes
      Relaxation processes
      Semiconductor device structures
      Dynamical screening effects
      Electron hole plasma
      Energy momentum conservation
      Hot electron momentum relaxation
      Hot electron scattering
      Neutral plasma components
      Photoexcited quasi one dimensional structure
      Plasmon phonon coupling
      Power loss
      Random phase approximation
      Semiconductor quantum wires
      Permalink
      http://hdl.handle.net/11693/25797
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/0038-1098(96)00266-9
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      • Department of Physics 2485
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