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dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorIslam, M. S.en_US
dc.contributor.authorOnat, B.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorAytür, O.en_US
dc.contributor.authorTuttle, G.en_US
dc.contributor.authorTowe, E.en_US
dc.contributor.authorHenderson, R. H.en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.date.accessioned2016-02-08T10:48:17Z
dc.date.available2016-02-08T10:48:17Z
dc.date.issued1997-05en_US
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/11693/25634
dc.description.abstractWe report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Photonics Technology Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/68.588199en_US
dc.subjectHigh-speed circuits/devicesen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotodiodesen_US
dc.subjectResonant caity enhancementen_US
dc.subjectSchottky diodesen_US
dc.subjectBandwidthen_US
dc.subjectElectric contactsen_US
dc.subjectFrequency responseen_US
dc.subjectIntegrated optoelectronicsen_US
dc.subjectMirrorsen_US
dc.subjectPhotodetectorsen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectSemiconductor device testingen_US
dc.subjectFull width at half maximum (FWHM)en_US
dc.subjectResonant cavity enhanced (RCE) Schottky photodiodesen_US
dc.subjectSchottky metal contactsen_US
dc.subjectPhotodiodesen_US
dc.titleFabrication of high-speed resonant cavity enhanced schottky photodiodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage672en_US
dc.citation.epage674en_US
dc.citation.volumeNumber9en_US
dc.citation.issueNumber5en_US
dc.identifier.doi10.1109/68.588199en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.contributor.bilkentauthorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


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