Fabrication of high-speed resonant cavity enhanced schottky photodiodes
Author(s)
Date
1997-05Source Title
IEEE Photonics Technology Letters
Print ISSN
1041-1135
Publisher
Institute of Electrical and Electronics Engineers
Volume
9
Issue
5
Pages
672 - 674
Language
English
Type
ArticleItem Usage Stats
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Abstract
We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.
Keywords
High-speed circuits/devicesPhotodetectors
Photodiodes
Resonant caity enhancement
Schottky diodes
Bandwidth
Electric contacts
Frequency response
Integrated optoelectronics
Mirrors
Photodetectors
Schottky barrier diodes
Semiconducting aluminum compounds
Semiconducting gallium arsenide
Semiconductor device manufacture
Semiconductor device testing
Full width at half maximum (FWHM)
Resonant cavity enhanced (RCE) Schottky photodiodes
Schottky metal contacts
Photodiodes
Permalink
http://hdl.handle.net/11693/25634Published Version (Please cite this version)
http://dx.doi.org/10.1109/68.588199Collections
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