Fabrication of high-speed resonant cavity enhanced schottky photodiodes
Islam, M. S.
Henderson, R. H.
Ünlü, M. S.
IEEE Photonics Technology Letters
Institute of Electrical and Electronics Engineers
672 - 674
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We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.
Resonant caity enhancement
Schottky barrier diodes
Semiconducting aluminum compounds
Semiconducting gallium arsenide
Semiconductor device manufacture
Semiconductor device testing
Full width at half maximum (FWHM)
Resonant cavity enhanced (RCE) Schottky photodiodes
Schottky metal contacts
Published Version (Please cite this version)http://dx.doi.org/10.1109/68.588199
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