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      Fabrication of high-speed resonant cavity enhanced schottky photodiodes

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      Author(s)
      Özbay, Ekmel
      Islam, M. S.
      Onat, B.
      Gökkavas, M.
      Aytür, O.
      Tuttle, G.
      Towe, E.
      Henderson, R. H.
      Ünlü, M. S.
      Date
      1997-05
      Source Title
      IEEE Photonics Technology Letters
      Print ISSN
      1041-1135
      Publisher
      Institute of Electrical and Electronics Engineers
      Volume
      9
      Issue
      5
      Pages
      672 - 674
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.
      Keywords
      High-speed circuits/devices
      Photodetectors
      Photodiodes
      Resonant caity enhancement
      Schottky diodes
      Bandwidth
      Electric contacts
      Frequency response
      Integrated optoelectronics
      Mirrors
      Photodetectors
      Schottky barrier diodes
      Semiconducting aluminum compounds
      Semiconducting gallium arsenide
      Semiconductor device manufacture
      Semiconductor device testing
      Full width at half maximum (FWHM)
      Resonant cavity enhanced (RCE) Schottky photodiodes
      Schottky metal contacts
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/25634
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/68.588199
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Department of Physics 2485
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