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dc.contributor.authorIvanov V.A.en_US
dc.contributor.authorUgolkova, E.A.en_US
dc.contributor.authorZhuravlev, M.Ye.en_US
dc.contributor.authorHakioǧlu, T.en_US
dc.date.accessioned2016-02-08T10:45:36Z
dc.date.available2016-02-08T10:45:36Z
dc.date.issued1998en_US
dc.identifier.issn10579257
dc.identifier.urihttp://hdl.handle.net/11693/25486
dc.description.abstractThe electronic structure and superconductivity of layered organic materials based on the bis(ethylenedithio)tetrathiafulvalene molecule (BEDT-TTF, hereafter ET) with essential intra-ET correlations of electrons are analysed. Taking into account the Fermi surface topology, the superconducting electronic density of states (DOS) is calculated for a realistic model of K-ET2X salts. A d-symmetry of the superconducting order parameter is obtained and a relation is found between its nodes on the Fermi surface and the superconducting phase characteristics. The results are in agreement with the measured non-activated temperature dependences of the superconducting specific heat and NMR relaxation rate of central 13C atoms in ET. © 1998 John Wiley & Sons, Ltd.en_US
dc.language.isoEnglishen_US
dc.source.titleAdvanced Materials for Optics and Electronicsen_US
dc.subjectDielectric-metal transitionen_US
dc.subjectElectron correlationsen_US
dc.subjectFermi surfaceen_US
dc.subjectOrganic conductorsen_US
dc.subjectSuperconductivityen_US
dc.subjectCorrelation methodsen_US
dc.subjectElectronic density of statesen_US
dc.subjectElectronic structureen_US
dc.subjectFermi levelen_US
dc.subjectMathematical modelsen_US
dc.subjectNuclear magnetic resonance spectroscopyen_US
dc.subjectPhase transitionsen_US
dc.subjectRelaxation processesen_US
dc.subjectSaltsen_US
dc.subjectSpecific heaten_US
dc.subjectSuperconductivityen_US
dc.subjectTemperature measurementen_US
dc.subjectDielectric metal transitionsen_US
dc.subjectOrganic conductorsen_US
dc.titleElectronic structure, insulator-metal transition and superconductivity in K-ET2X saltsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage53en_US
dc.citation.epage60en_US
dc.citation.volumeNumber8en_US
dc.citation.issueNumber2en_US


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