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dc.contributor.authorOnat, B. M.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorAta, E. P.en_US
dc.contributor.authorTowe, E.en_US
dc.contributor.authorÜnlü, M. S.en_US
dc.date.accessioned2016-02-08T10:45:10Z
dc.date.available2016-02-08T10:45:10Z
dc.date.issued1998en_US
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/11693/25462
dc.description.abstractResonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE Schottky photodiodes in the (Al, In) GaAs material system for 900-nm wavelength. The observed temporal response with 10-ps pulsewidth was limited by the measurement setup and a conservative estimation of the bandwidth corresponds to more than 100 GHz. A direct comparison of RCE versus conventional detector performance was performed by high speed measurements under optical excitation at resonant wavelength (895 nm) and at 840 nm where the device functions as a single-pass conventional photodiode. A more than two-fold bandwidth enhancement with the RCE detection scheme was demonstrated.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Photonics Technology Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/68.669338en_US
dc.subjectHigh-speeden_US
dc.subjectPhotodetectoren_US
dc.subjectResonant cavity enhancementen_US
dc.subjectSchottky photodiodeen_US
dc.subjectBandwidthen_US
dc.subjectCavity resonatorsen_US
dc.subjectOptical communication equipmenten_US
dc.subjectPhotodetectorsen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device structuresen_US
dc.subjectResonant cavity enhanced Schottky photodiodesen_US
dc.subjectPhotodiodesen_US
dc.title100-GHz resonant cavity enhanced Schottky photodiodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage707en_US
dc.citation.epage709en_US
dc.citation.volumeNumber10en_US
dc.citation.issueNumber5en_US
dc.identifier.doi10.1109/68.669338en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.contributor.bilkentauthorÖzbay, Ekmel


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