100-GHz resonant cavity enhanced Schottky photodiodes
Date
1998Source Title
IEEE Photonics Technology Letters
Print ISSN
1041-1135
Publisher
Institute of Electrical and Electronics Engineers
Volume
10
Issue
5
Pages
707 - 709
Language
English
Type
ArticleItem Usage Stats
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Abstract
Resonant cavity enhanced (RCE) photodiodes are
promising candidates for applications in optical communications
and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE Schottky photodiodes in the (Al, In) GaAs material system for 900-nm wavelength.
The observed temporal response with 10-ps pulsewidth was limited by the measurement setup and a conservative estimation of
the bandwidth corresponds to more than 100 GHz. A direct comparison of RCE versus conventional detector performance was
performed by high speed measurements under optical excitation
at resonant wavelength (895 nm) and at 840 nm where the device
functions as a single-pass conventional photodiode. A more than
two-fold bandwidth enhancement with the RCE detection scheme
was demonstrated.
Keywords
High-speedPhotodetector
Resonant cavity enhancement
Schottky photodiode
Bandwidth
Cavity resonators
Optical communication equipment
Photodetectors
Schottky barrier diodes
Semiconducting gallium arsenide
Semiconductor device structures
Resonant cavity enhanced Schottky photodiodes
Photodiodes