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      100-GHz resonant cavity enhanced Schottky photodiodes

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      Author(s)
      Onat, B. M.
      Gökkavas, M.
      Özbay, Ekmel
      Ata, E. P.
      Towe, E.
      Ünlü, M. S.
      Date
      1998
      Source Title
      IEEE Photonics Technology Letters
      Print ISSN
      1041-1135
      Publisher
      Institute of Electrical and Electronics Engineers
      Volume
      10
      Issue
      5
      Pages
      707 - 709
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE Schottky photodiodes in the (Al, In) GaAs material system for 900-nm wavelength. The observed temporal response with 10-ps pulsewidth was limited by the measurement setup and a conservative estimation of the bandwidth corresponds to more than 100 GHz. A direct comparison of RCE versus conventional detector performance was performed by high speed measurements under optical excitation at resonant wavelength (895 nm) and at 840 nm where the device functions as a single-pass conventional photodiode. A more than two-fold bandwidth enhancement with the RCE detection scheme was demonstrated.
      Keywords
      High-speed
      Photodetector
      Resonant cavity enhancement
      Schottky photodiode
      Bandwidth
      Cavity resonators
      Optical communication equipment
      Photodetectors
      Schottky barrier diodes
      Semiconducting gallium arsenide
      Semiconductor device structures
      Resonant cavity enhanced Schottky photodiodes
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/25462
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/68.669338
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Department of Physics 2485
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