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dc.contributor.authorBairamov, B. H.en_US
dc.contributor.authorAydinli, A.en_US
dc.contributor.authorTanatar, B.en_US
dc.contributor.authorGüven, K.en_US
dc.contributor.authorGurevich, S.en_US
dc.contributor.authorMel'tser, B. Ya.en_US
dc.contributor.authorIvanov, S. V.en_US
dc.contributor.authorKop'ev, P. S.en_US
dc.contributor.authorSmirnitskii, V. B.en_US
dc.contributor.authorTimofeev, F. N.en_US
dc.date.accessioned2016-02-08T10:44:07Z
dc.date.available2016-02-08T10:44:07Z
dc.date.issued1998en_US
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/11693/25398
dc.description.abstractWe report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3Ga 0.7As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ω L10 = 285.6 cm -1 for L = 11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderlein† as applied to the GaAs/Al 0.3Ga 0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques. © 1998 Academic Press.en_US
dc.language.isoEnglishen_US
dc.source.titleSuperlattices and Microstructuresen_US
dc.relation.isversionofhttps://doi.org/10.1006/spmi.1996.0259en_US
dc.subjectConfined phononsen_US
dc.subjectQuantum wiresen_US
dc.subjectCrystalline materialsen_US
dc.subjectLow temperature propertiesen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectPhononsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectRaman spectroscopyen_US
dc.subjectReactive ion etchingen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectAluminum gallium arsenideen_US
dc.subjectEnderlein theoryen_US
dc.subjectSemiconductor quantum wiresen_US
dc.titleRaman scattering from confined phonons in GaAs/AlGaAs quantum wiresen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage299en_US
dc.citation.epage303en_US
dc.citation.volumeNumber24en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1006/spmi.1996.0259en_US
dc.publisherAcademic Pressen_US


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